Experimental and theoretical study of polarized photoluminescence caused by anisotropic strain relaxation in nonpolar a-plane textured ZnO grown by a low-pressure chemical vapor deposition
- Department of Electronic Engineering, Ming Chuan University, Taoyuan 333, Taiwan (China)
- Department of Applied Physics, National University of Kaohsiung, Kaohsiung 811, Taiwan (China)
- Department of Traffic Science, Central Police University, Taoyuan 333, Taiwan (China)
- Green Energy and Environment Research Labs, Industrial Technology Research Institute, Hsinchu 310, Taiwan (China)
- Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China)
Anisotropic strain relaxation and the resulting degree of polarization of photoluminescence (PL) in nonpolar a-plane textured ZnO are experimentally and theoretically studied. A thicker nonpolar a-plane textured ZnO film enhances the anisotropic in-plane strain relaxation, resulting in a larger degree of polarization of PL and better sample quality. Anisotropic in-plane strains, sample quality, and degree of polarization of PL in nonpolar a-plane ZnO are consequences of the degree of anisotropic in-plane strain relaxation. By the k·p perturbation approach, simulation results of the variation of the degree of polarization for the electronic transition upon anisotropic in-plane strain relaxation agree with experimental results.
- OSTI ID:
- 22483185
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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