Correlated high-resolution x-ray diffraction, photoluminescence, and atom probe tomography analysis of continuous and discontinuous In{sub x}Ga{sub 1−x}N quantum wells
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
Atom probe tomography (APT) is used to characterize the influence of hydrogen dosing during GaN barrier growth on the indium distribution of In{sub x}Ga{sub 1−x}N quantum wells, and correlated micro-photoluminescence is used to measure changes in the emission spectrum and efficiency. Relative to the control growth, hydrogen dosing leads to a 50% increase in emission intensity arising from discontinuous quantum wells that are narrower, of lower indium content, and with more abrupt interfaces. Simulations of carrier distributions based on APT composition profiles indicate that the greater carrier confinement leads to an increased radiative recombination rate. Furthermore, APT analysis of quantum well profiles enables refinement of x-ray diffraction analysis for more accurate nondestructive measurements of composition.
- OSTI ID:
- 22483182
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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journal | March 2019 |
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journal | April 2017 |
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