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Title: Modulation of superconducting critical temperature in niobium film by using all-solid-state electric-double-layer transistor

Abstract

An all-solid-state electric-double-layer transistor (EDLT) was fabricated for electrical modulation of the superconducting critical temperature (T{sub c}) of Nb film epitaxially grown on α-Al{sub 2}O{sub 3} (0001) single crystal. In an experiment, T{sub c} was modulated from 8.33 to 8.39 K while the gate voltage (V{sub G}) was varied from 2.5 to −2.5 V. The specific difference of T{sub c} for the applied V{sub G} was 12 mK/V, which is larger than that of an EDLT composed of ionic liquid. A T{sub c} enhancement of 300 mK was found at the Li{sub 4}SiO{sub 4}/Nb film interface and is attributed to an increase in density of states near the Fermi level due to lattice constant modulation. This solid electrolyte gating method should enable development of practical superconducting devices highly compatible with other electronic devices.

Authors:
; ; ;  [1]
  1. International Center for Materials Nanoarchitechtonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)
Publication Date:
OSTI Identifier:
22483155
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM OXIDES; CRITICAL TEMPERATURE; DENSITY OF STATES; ELECTRIC POTENTIAL; ELECTRONIC EQUIPMENT; EPITAXY; FERMI LEVEL; FILMS; INTERFACES; LATTICE PARAMETERS; LIQUIDS; LITHIUM SILICATES; MODULATION; MONOCRYSTALS; NIOBIUM; SOLID ELECTROLYTES; SOLIDS; SUPERCONDUCTING DEVICES; TRANSISTORS

Citation Formats

Tsuchiya, Takashi, Moriyama, Satoshi, Terabe, Kazuya, and Aono, Masakazu. Modulation of superconducting critical temperature in niobium film by using all-solid-state electric-double-layer transistor. United States: N. p., 2015. Web. doi:10.1063/1.4926572.
Tsuchiya, Takashi, Moriyama, Satoshi, Terabe, Kazuya, & Aono, Masakazu. Modulation of superconducting critical temperature in niobium film by using all-solid-state electric-double-layer transistor. United States. https://doi.org/10.1063/1.4926572
Tsuchiya, Takashi, Moriyama, Satoshi, Terabe, Kazuya, and Aono, Masakazu. 2015. "Modulation of superconducting critical temperature in niobium film by using all-solid-state electric-double-layer transistor". United States. https://doi.org/10.1063/1.4926572.
@article{osti_22483155,
title = {Modulation of superconducting critical temperature in niobium film by using all-solid-state electric-double-layer transistor},
author = {Tsuchiya, Takashi and Moriyama, Satoshi and Terabe, Kazuya and Aono, Masakazu},
abstractNote = {An all-solid-state electric-double-layer transistor (EDLT) was fabricated for electrical modulation of the superconducting critical temperature (T{sub c}) of Nb film epitaxially grown on α-Al{sub 2}O{sub 3} (0001) single crystal. In an experiment, T{sub c} was modulated from 8.33 to 8.39 K while the gate voltage (V{sub G}) was varied from 2.5 to −2.5 V. The specific difference of T{sub c} for the applied V{sub G} was 12 mK/V, which is larger than that of an EDLT composed of ionic liquid. A T{sub c} enhancement of 300 mK was found at the Li{sub 4}SiO{sub 4}/Nb film interface and is attributed to an increase in density of states near the Fermi level due to lattice constant modulation. This solid electrolyte gating method should enable development of practical superconducting devices highly compatible with other electronic devices.},
doi = {10.1063/1.4926572},
url = {https://www.osti.gov/biblio/22483155}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 1,
volume = 107,
place = {United States},
year = {Mon Jul 06 00:00:00 EDT 2015},
month = {Mon Jul 06 00:00:00 EDT 2015}
}