In-plane tunneling anisotropic magnetoresistance in (Ga,Mn)As/GaAs Esaki diodes in the regime of the excess current

Journal Article · Mon Jun 29 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4923309· OSTI ID:22483118

Shiogai, J. ^[1]; Utz, M.; Schuh, D.; Bougeard, D.; Weiss, D. ^[2]; Kohda, M.; Nitta, J. ^[1]; Nojima, T. ^[3]

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1. Department of Materials Science, Tohoku University, Sendai 980-8579, Miyagi (Japan)
2. Institute of Experimental and Applied Physics, University of Regensburg, D-93040 Regensburg (Germany)
3. Institute of Materials Research, Tohoku University, Sendai 980-8577, Miyagi (Japan)

We investigate the angular dependence of the tunneling anisotropic magnetoresistance in (Ga,Mn)As/n-GaAs spin Esaki diodes in the regime where the tunneling process is dominated by the excess current through midgap states in (Ga,Mn)As. We compare it to similar measurements performed in the regime of band-to-band tunneling. Whereas the latter show biaxial symmetry typical for magnetic anisotropy observed in (Ga,Mn)As samples, the former is dominated by uniaxial anisotropy along the 〈110〉 axes.

• OSTI ID: 22483118
• Journal Information: Applied Physics Letters, Vol. 106, Issue 26; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ANISOTROPY
CURRENTS
GALLIUM ARSENIDES
MAGNETORESISTANCE
SPIN
TUNNEL EFFECT