Antiferromagnetic order induced by gadolinium substitution in Bi{sub 2}Se{sub 3} single crystals
- Jožef Stefan Institute and University of Ljubljana, Jamova 39, SI-1000 Ljubljana (Slovenia)
Magnetic topological insulators can serve as a fundamental platform for various spin-based device applications. We report the antiferromagnetic order induced by the magnetic impurity dopants of Gd in Gd{sub x}Bi{sub 2−x}Se{sub 3} and the systematic results with varying the Gd concentration x ( = 0.14, 0.20, 0.30, and 0.40). The antiferromagnetic order is demonstrated by the magnetic susceptibility, electrical resistivity, and specific heat measurements. The anomaly observed at T{sub N} = 6 K for x ≥ 0.30 shifts towards lower temperature with increasing the magnetic field, indicative of antiferromagnetic ground state. The Gd substitution into Bi{sub 2}Se{sub 3} enables not only tuning the magnetism from paramagnetic to antiferromagnetic for high x (≥ 0.30) but also giving a promising candidate for antiferromagnetic topological insulators.
- OSTI ID:
- 22483091
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 25; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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