Development of a microwave ion source for ion implantations

Journal Article · Mon Feb 15 00:00:00 EST 2016 · Review of Scientific Instruments

DOI:https://doi.org/10.1063/1.4935014· OSTI ID:22483052

Murata, H.; Kitami, H.; Mitsubori, H.; Sakuraba, J.; Soga, T.; Aoki, Y.; Katoh, T. ^[1]

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1. Technology Research Center, Sumitomo Heavy Industries Ltd., Yokosuka, Kanagawa 237-8555 (Japan)

A microwave ion source is expected to have a long lifetime, as it has fewer consumables. Thus, we are in the process of developing a microwave ion source for ion implantation applications. In this paper, we report on a newly developed plasma chamber and the extracted P{sup +} beam currents. The volume of the plasma chamber is optimized by varying the length of a boron nitride block installed within the chamber. The extracted P{sup +} beam current is more than 30 mA, at a 25 kV acceleration voltage, using PH{sub 3} gas.

• OSTI ID: 22483052
• Journal Information: Review of Scientific Instruments, Vol. 87, Issue 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0034-6748
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ACCELERATION
BEAM CURRENTS
BORON NITRIDES
ELECTRIC POTENTIAL
ION IMPLANTATION
ION SOURCES
LIFETIME
MICROWAVE RADIATION
PHOSPHORUS HYDRIDES
PHOSPHORUS IONS
PLASMA