Thermal transport in tantalum oxide films for memristive applications

Journal Article · Mon Jul 13 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4926921· OSTI ID:22482265

Landon, Colin D.; Wilke, Rudeger H. T.; Brumbach, Michael T.; Blea-Kirby, Mia; Ihlefeld, Jon F.; Marinella, Matthew J.; Beechem, Thomas E. ^[1]; Brennecka, Geoff L. ^[2]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States)
2. Colorado School of Mines, Golden, Colorado 80401 (United States)

The thermal conductivity of amorphous TaO{sub x} memristive films having variable oxygen content is measured using time domain thermoreflectance. Thermal transport is described by a two-part model where the electrical contribution is quantified via the Wiedemann-Franz relation and the vibrational contribution by the minimum thermal conductivity limit for amorphous solids. The vibrational contribution remains constant near 0.9 W/mK regardless of oxygen concentration, while the electrical contribution varies from 0 to 3.3 W/mK. Thus, the dominant thermal carrier in TaO{sub x} switches between vibrations and charge carriers and is controllable either by oxygen content during deposition, or dynamically by field-induced charge state migration.

• OSTI ID: 22482265
• Journal Information: Applied Physics Letters, Vol. 107, Issue 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABUNDANCE
CARRIERS
CHARGE CARRIERS
CHARGE STATES
DEPOSITION
FILMS
OXYGEN
SOLIDS
SWITCHES
TANTALUM OXIDES
THERMAL CONDUCTIVITY