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Title: Gate tunable monolayer MoS{sub 2}/InP heterostructure solar cells

Abstract

We demonstrate monolayer molybdenum disulfide (MoS{sub 2})/indium phosphide (InP) van der Waals heterostructure with remarkable photovoltaic response. Furthermore, benefiting from the atomically thin and semiconductor nature of MoS{sub 2}, we have designed the gate tunable MoS{sub 2}/InP heterostructure. Applied with a top gate voltage, the Fermi level of MoS{sub 2} is effectively tuned, and the barrier height at the MoS{sub 2}/InP heterojunction correspondingly changes. The power conversion efficiency of MoS{sub 2}/InP solar cells has reached a value of 7.1% under AM 1.5G illumination with a gate voltage of +6 V. The tunable MoS{sub 2}/InP heterostructure may be promising for highly efficient solar cells.

Authors:
; ; ; ; ; ;  [1]
  1. College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027 (China)
Publication Date:
OSTI Identifier:
22482261
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 15; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; EFFICIENCY; ELECTRIC POTENTIAL; FERMI LEVEL; HETEROJUNCTIONS; ILLUMINANCE; INDIUM; INDIUM PHOSPHIDES; MOLYBDENUM SULFIDES; PHOTOVOLTAIC EFFECT; SEMICONDUCTOR MATERIALS; SOLAR CELLS; VAN DER WAALS FORCES

Citation Formats

Lin, Shisheng, Wang, Peng, Li, Xiaoqiang, Wu, Zhiqian, Xu, Zhijuan, Zhang, Shengjiao, and Xu, Wenli. Gate tunable monolayer MoS{sub 2}/InP heterostructure solar cells. United States: N. p., 2015. Web. doi:10.1063/1.4933294.
Lin, Shisheng, Wang, Peng, Li, Xiaoqiang, Wu, Zhiqian, Xu, Zhijuan, Zhang, Shengjiao, & Xu, Wenli. Gate tunable monolayer MoS{sub 2}/InP heterostructure solar cells. United States. https://doi.org/10.1063/1.4933294
Lin, Shisheng, Wang, Peng, Li, Xiaoqiang, Wu, Zhiqian, Xu, Zhijuan, Zhang, Shengjiao, and Xu, Wenli. 2015. "Gate tunable monolayer MoS{sub 2}/InP heterostructure solar cells". United States. https://doi.org/10.1063/1.4933294.
@article{osti_22482261,
title = {Gate tunable monolayer MoS{sub 2}/InP heterostructure solar cells},
author = {Lin, Shisheng and Wang, Peng and Li, Xiaoqiang and Wu, Zhiqian and Xu, Zhijuan and Zhang, Shengjiao and Xu, Wenli},
abstractNote = {We demonstrate monolayer molybdenum disulfide (MoS{sub 2})/indium phosphide (InP) van der Waals heterostructure with remarkable photovoltaic response. Furthermore, benefiting from the atomically thin and semiconductor nature of MoS{sub 2}, we have designed the gate tunable MoS{sub 2}/InP heterostructure. Applied with a top gate voltage, the Fermi level of MoS{sub 2} is effectively tuned, and the barrier height at the MoS{sub 2}/InP heterojunction correspondingly changes. The power conversion efficiency of MoS{sub 2}/InP solar cells has reached a value of 7.1% under AM 1.5G illumination with a gate voltage of +6 V. The tunable MoS{sub 2}/InP heterostructure may be promising for highly efficient solar cells.},
doi = {10.1063/1.4933294},
url = {https://www.osti.gov/biblio/22482261}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 15,
volume = 107,
place = {United States},
year = {Mon Oct 12 00:00:00 EDT 2015},
month = {Mon Oct 12 00:00:00 EDT 2015}
}