SiN{sub x} layers on nanostructured Si solar cells: Effective for optical absorption and carrier collection
- Department of Physics, Ewha Womans University, Seoul 120-750 (Korea, Republic of)
- Applied Device and Material Lab., Device Technology Division, Korea Advanced Nanofab Center (KANC), Suwon 443270 (Korea, Republic of)
- Department of Electrical Engineering, Incheon National University, Incheon 406772 (Korea, Republic of)
We compared nanopatterned Si solar cells with and without SiN{sub x} layers. The SiN{sub x} layer coating significantly improved the internal quantum efficiency of the nanopatterned cells at long wavelengths as well as short wavelengths, whereas the surface passivation helped carrier collection of flat cells mainly at short wavelengths. The surface nanostructured array enhanced the optical absorption and also concentrated incoming light near the surface in broad wavelength range. Resulting high density of the photo-excited carriers near the surface could lead to significant recombination loss and the SiN{sub x} layer played a crucial role in the improved carrier collection of the nanostructured solar cells.
- OSTI ID:
- 22482250
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 15; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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