Electronic transition above room temperature in CaMn{sub 7}O{sub 12} films

Journal Article · Mon Oct 05 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4932132· OSTI ID:22482215

Huon, A.; Lang, A. C.; Moon, E. J.; Taheri, M. L.; Saldana-Greco, D.; Lim, J. S.; Rappe, A. M. ^[1]

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1. The Makineni Theoretical Laboratories, Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6323 (United States)

We report on the electronic phase transition in CaMn{sub 7}O{sub 12} quadruple perovskite films synthesized by oxide molecular beam epitaxy on SrLaAlO{sub 4} and La{sub 0.3}Sr{sub 0.7}Al{sub 0.65}Ta{sub 0.35}O{sub 3} substrates. We use x-ray diffraction and transmission electron microscopy to confirm that the CaMn{sub 7}O{sub 12} phase has been realized. Temperature dependent resistivity measurements reveal a signature of a charge ordering phase transition at ≈425 K, consistent with bulk CaMn{sub 7}O{sub 12}. The transition temperature is found to be relatively invariant to changes in the cation stoichiometry. Density functional theory calculations reveal the changes in atomic and electronic structure induced by the charge ordering transition.

• OSTI ID: 22482215
• Journal Information: Applied Physics Letters, Vol. 107, Issue 14; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CATIONS
DENSITY FUNCTIONAL METHOD
ELECTRONIC STRUCTURE
FILMS
MOLECULAR BEAM EPITAXY
OXIDES
PEROVSKITE
PHASE TRANSFORMATIONS
STOICHIOMETRY
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
TRANSITION TEMPERATURE
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION