Broadband nanophotonic waveguides and resonators based on epitaxial GaN thin films

Journal Article · Mon Oct 05 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4933093· OSTI ID:22482196

Bruch, Alexander W.; Xiong, Chi; Leung, Benjamin; Poot, Menno; Han, Jung

We demonstrate broadband, low loss optical waveguiding in single crystalline GaN grown epitaxially on c-plane sapphire wafers through a buffered metal-organic chemical vapor phase deposition process. High Q optical microring resonators are realized in near infrared, infrared, and near visible regimes with intrinsic quality factors exceeding 50 000 at all the wavelengths we studied. TEM analysis of etched waveguide reveals growth and etch-induced defects. Reduction of these defects through improved material and device processing could lead to even lower optical losses and enable a wideband photonic platform based on GaN-on-sapphire material system.

• OSTI ID: 22482196
• Journal Information: Applied Physics Letters, Vol. 107, Issue 14; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CRYSTAL GROWTH
DEPOSITION
EPITAXY
GALLIUM NITRIDES
MONOCRYSTALS
ORGANOMETALLIC COMPOUNDS
PROCESSING
QUALITY FACTOR
RESONATORS
SAPPHIRE
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
VAPORS
WAVEGUIDES
WAVELENGTHS