Transfer-free synthesis of highly ordered Ge nanowire arrays on glass substrates

Journal Article · Mon Sep 28 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4932054· OSTI ID:22482175

Nakata, M.; Suemasu, T. ^[1]; Jevasuwan, W.; Fukata, N. ^[2]; Saitoh, N.; Yoshizawa, N. ^[3]

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1. Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan)
2. National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)
3. Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569 (Japan)

Vertically aligned Ge nanowires (NWs) are directly synthesized on glass via vapor-liquid-solid (VLS) growth using chemical-vapor deposition. The use of the (111)-oriented Ge seed layer, formed by metal-induced crystallization at 325 °C, dramatically improved the density, uniformity, and crystal quality of Ge NWs. In particular, the VLS growth at 400 °C allowed us to simultaneously achieve the ordered morphology and high crystal quality of the Ge NW array. Transmission electron microscopy demonstrated that the resulting Ge NWs had no dislocations or stacking faults. Production of high-quality NW arrays on amorphous insulators will promote the widespread application of nanoscale devices.

• OSTI ID: 22482175
• Journal Information: Applied Physics Letters, Vol. 107, Issue 13; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CHEMICAL VAPOR DEPOSITION
CRYSTALLIZATION
CRYSTALS
DENSITY
DISLOCATIONS
GLASS
NANOWIRES
STACKING FAULTS
SUBSTRATES
SYNTHESIS
TRANSMISSION ELECTRON MICROSCOPY
VAPORS