Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates

Journal Article · Mon Sep 14 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4931132· OSTI ID:22482094

Sundaram, S.; El Gmili, Y. ^[1]; Puybaret, R.; Li, X.; Bonanno, P. L.; Voss, P. L.; Pantzas, K.; Patriarche, G. ^[2]; Salvestrini, J. P. ^[3]

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1. CNRS, UMI 2958 Georgia Tech-CNRS, 2 Rue Marconi, 57070 Metz (France)
2. CNRS, UPR LPN, Route de Nozay, 91460 Marcoussis (France)
3. Universite de Lorraine, Centrale Supelec, LMOPS, EA 4423, 2 rue E. Belin, 57070 Metz (France)

We report the metal organic chemical vapor deposition growth of dislocation-free 100 nm thick hexagonal InGaN nanopyramid arrays with up to 33% of indium content by nano-selective area growth on patterned AlN/Si (111) substrates. InGaN grown on SiO{sub 2} patterned templates exhibit high selectivity. Their single crystal structure is confirmed by scanning transmission electron microscope combined with an energy dispersive X-ray analysis, which also reveals the absence of threading dislocations in the InGaN nanopyramids due to elastic strain relaxation mechanisms. Cathodoluminescence measurements on a single InGaN nanopyramid clearly show an improvement of the optical properties when compared to planar InGaN grown under the same conditions. The good structural, morphological, and optical quality of the InGaN nanostructures grown on AlN/Si indicates that the nano-selective area growth technology is attractive for the realization of site-controlled indium-rich InGaN nanostructure-based devices and can also be transferred to other highly mismatched substrates.

• OSTI ID: 22482094
• Journal Information: Applied Physics Letters, Vol. 107, Issue 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM NITRIDES
CATHODOLUMINESCENCE
CHEMICAL VAPOR DEPOSITION
DISLOCATIONS
INDIUM
MONOCRYSTALS
NANOSTRUCTURES
OPTICAL PROPERTIES
ORGANOMETALLIC COMPOUNDS
RELAXATION
SILICA
SILICON OXIDES
STRAINS
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY
X RADIATION