Determining the band alignment of TbAs:GaAs and TbAs:In{sub 0.53}Ga{sub 0.47}As
- Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716 (United States)
- Department of Physics and Astronomy, University of Delaware, Newark, Delaware 19716 (United States)
- Physics and Technology Department, Edinboro University of Pennsylvania, Edinboro, Pennsylvania 16444 (United States)
- Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
We propose and systematically justify a band structure for TbAs nanoparticles in GaAs and In{sub 0.53}Ga{sub 0.47}As host matrices. Fluence-dependent optical-pump terahertz-probe measurements suggest the TbAs nanoparticles have a band gap and provide information on the carrier dynamics, which are determined by the band alignment. Spectrophotometry measurements provide the energy of optical transitions in the nanocomposite systems and reveal a large blue shift in the absorption energy when the host matrix is changed from In{sub 0.53}Ga{sub 0.47}As to GaAs. Finally, Hall data provides the approximate Fermi level in each system. From this data, we deduce that the TbAs:GaAs system forms a type I (straddling) heterojunction and the TbAs:In{sub 0.53}Ga{sub 0.47}As system forms a type II (staggered) heterojunction.
- OSTI ID:
- 22482035
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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