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Title: Determining the band alignment of TbAs:GaAs and TbAs:In{sub 0.53}Ga{sub 0.47}As

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4930816· OSTI ID:22482035
; ;  [1];  [2];  [3]; ; ;  [4];  [1]
  1. Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716 (United States)
  2. Department of Physics and Astronomy, University of Delaware, Newark, Delaware 19716 (United States)
  3. Physics and Technology Department, Edinboro University of Pennsylvania, Edinboro, Pennsylvania 16444 (United States)
  4. Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

We propose and systematically justify a band structure for TbAs nanoparticles in GaAs and In{sub 0.53}Ga{sub 0.47}As host matrices. Fluence-dependent optical-pump terahertz-probe measurements suggest the TbAs nanoparticles have a band gap and provide information on the carrier dynamics, which are determined by the band alignment. Spectrophotometry measurements provide the energy of optical transitions in the nanocomposite systems and reveal a large blue shift in the absorption energy when the host matrix is changed from In{sub 0.53}Ga{sub 0.47}As to GaAs. Finally, Hall data provides the approximate Fermi level in each system. From this data, we deduce that the TbAs:GaAs system forms a type I (straddling) heterojunction and the TbAs:In{sub 0.53}Ga{sub 0.47}As system forms a type II (staggered) heterojunction.

OSTI ID:
22482035
Journal Information:
Applied Physics Letters, Vol. 107, Issue 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English

Cited By (3)

High Thermoelectric Power Factor and ZT in TbAs:InGaAs Epitaxial Nanocomposite Material journal February 2019
Growth and Thermal Characterization of TbAs Nanoparticles Grown by Inert Gas Condensation journal October 2019
Growth and characterization of TbAs films journal November 2016