Spectroscopic investigations of band offsets of MgO|Al{sub x}Ga{sub 1-x}N epitaxial heterostructures with varying AlN content

Journal Article · Mon Sep 07 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4930309· OSTI ID:22482033

Paisley, Elizabeth A.; Brumbach, Michael; Allerman, Andrew A.; Atcitty, Stanley; Baca, Albert G.; Armstrong, Andrew M.; Kaplar, Robert J.

Epitaxial (111) MgO films were prepared on (0001) Al{sub x}Ga{sub 1−x}N via molecular-beam epitaxy for x = 0 to x = 0.67. Valence band offsets of MgO to Al{sub x}Ga{sub 1−x}N were measured using X-ray photoelectron spectroscopy as 1.65 ± 0.07 eV, 1.36 ± 0.05 eV, and 1.05 ± 0.09 eV for x = 0, 0.28, and 0.67, respectively. This yielded conduction band offsets of 2.75 eV, 2.39 eV, and 1.63 eV for x = 0, 0.28, and 0.67, respectively. All band offsets measured between MgO and Al{sub x}Ga{sub 1−x}N provide a > 1 eV barrier height to the semiconductor.

• OSTI ID: 22482033
• Journal Information: Applied Physics Letters, Vol. 107, Issue 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM NITRIDES
EV RANGE
FILMS
MAGNESIUM OXIDES
MOLECULAR BEAM EPITAXY
SEMICONDUCTOR MATERIALS
VALENCE
X-RAY PHOTOELECTRON SPECTROSCOPY
YIELDS