Substrate temperature control for the formation of metal nanohelices by glancing angle deposition
- Department of Mechanical Engineering and Science, Kyoto University, Kyoto-daigaku-Katsura, Nishikyo-ku, Kyoto 615-8540 (Japan)
- Research and Development Group, Hitachi, Ltd., 832-2, Horiguchi, Hitachinaka, Ibaraki 312-0034 (Japan)
The targets of this study are to develop a device to precisely control the temperature during glancing angle deposition, to make films consisting of low melting temperature metal nanoelements with a controlled shape (helix), and to explore the substrate temperature for controlling the nanoshapes. A vacuum evaporation system capable of both cooling a substrate and measurement of its temperature was used to form thin films consisting of arrays of Cu and Al nanohelices on silicon substrates by maintaining the substrate temperature at T{sub s}/T{sub m} < 0.22 (T{sub s} is the substrate temperature and T{sub m} is the melting temperature of target material). The critical T{sub s}/T{sub m} to produce Cu and Al nanohelices corresponds to the transitional homologous temperature between zones I and II in the structure zone model for the solid film, where surface diffusion becomes dominant. X-ray diffraction analysis indicated that the Cu and Al nanohelix thin films were composed of coarse oriented grains with diameters of several tens of nanometers.
- OSTI ID:
- 22479658
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 33, Issue 6; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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