Gamma ray induced thermoluminescence properties of Eu{sup 3+} doped SnO{sub 2} phosphor
- Department of Applied Physics, Indian School of Mines, Dhanbad-826004 (India)
- Inter University Accelerator Center, New Delhi-110 067 (India)
Highlights: • TL properties of SnO{sub 2}:Eu{sup 3+} were reported upon γ-ray irradiation. • Effect of doping, irradiation dose and heating rate on TL properties were studied in detail. • The kinetic parameters associated with TL were calculated for first time in SnO{sub 2}:Eu{sup 3+}. • Existence of second-order kinetics indicates the occurrence of retrapping phenomena. • Retrapping of electrons at deep traps occurred due to thermal energy stimulation. - Abstract: This paper reports the thermoluminescence properties of Eu{sup 3+} doped SnO{sub 2} phosphors synthesized by combustion method. The thermoluminescence (TL) studies were carried out after irradiating the sample by γ-rays in the dose range 100 Gy to 1 KGy. The glow curves of γ-irradiated phosphors were resolved into two peaks, one centred at 116 °C and other at 300 °C. Intensity of the glow peak increases linearly in the studied dose range of γ-rays. Kinetic parameters such as order of kinetics, trap depth and frequency factor associated with the glow peak were calculated by various glow curve methods.
- OSTI ID:
- 22475945
- Journal Information:
- Materials Research Bulletin, Vol. 70; Other Information: Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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