Influence of Al content on the properties of ternary Al{sub 2x}In{sub 2−2x}O{sub 3} alloy films prepared on YSZ (1 1 1) substrates by MOCVD

Journal Article · Thu Oct 15 00:00:00 EDT 2015 · Materials Research Bulletin

DOI:https://doi.org/10.1016/J.MATERRESBULL.2015.05.001· OSTI ID:22475918

Feng, Xianjin; Zhao, Cansong; Li, Zhao; Luo, Yi; Ma, Jin

Highlights: • Al{sub 2x}In{sub 2−2x}O{sub 3} films were prepared on the Y-stabilized ZrO{sub 2} (1 1 1) substrates by MOCVD at 700 °C. • A phase transition from the bixbyite In{sub 2}O{sub 3} structure to the amorphous structure was observed. • The lowest resistivity of 4.7 × 10{sup −3} Ω cm was obtained for the Al{sub 0.4}In{sub 1.6}O{sub 3} film. • Tunable optical band gap from 3.7 to 4.8 eV was obtained. - Abstract: The ternary Al{sub 2x}In{sub 2−2x}O{sub 3} films with different Al contents of x [Al/(Al + In) atomic ratio] have been fabricated on the Y-stabilized ZrO{sub 2} (1 1 1) substrates by metal organic chemical vapor deposition at 700 °C. The structural, electrical and optical properties of the films as a result of different Al contents (x = 0.1–0.9) were investigated in detail. With the increase of Al content from 10% to 90%, a phase transition from the bixbyite In{sub 2}O{sub 3} structure with a single orientation along (1 1 1) to the amorphous structure was observed. The minimum resistivity of 4.7 × 10{sup −3} Ω cm, a carrier concentration of 1.4 × 10{sup 20} cm{sup −3} and a Hall mobility of 9.8 cm{sup 2} v{sup −1} s{sup −1} were obtained for the sample with x = 0.2. The average transmittances for the Al{sub 2x}In{sub 2−2x}O{sub 3} films in the visible range were all over 78% and the optical band gap of the films could be tuned from 3.7 to 4.8 eV.

• OSTI ID: 22475918
• Journal Information: Materials Research Bulletin, Vol. 70; Other Information: Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
CHEMICAL VAPOR DEPOSITION
CONCENTRATION RATIO
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
INDIUM COMPOUNDS
INDIUM OXIDES
OPTICAL PROPERTIES
ORGANOMETALLIC COMPOUNDS
OXYGEN COMPOUNDS
PHASE TRANSFORMATIONS
SUBSTRATES
TERNARY ALLOY SYSTEMS
THIN FILMS
YTTRIUM OXIDES
ZIRCONIUM OXIDES