Spin polarized state filter based on semiconductor–dielectric–iron–semiconductor multi-nanolayer device
- Universidade do Algarve, FCT, DQF, and CIQA, 8005-139 Faro (Portugal)
Highlights: • Development of a new spintronics device. • Development of quantum spin polarized filters. • Development of theory of quantum spin polarized filter. - Abstract: Presently we report spin-polarized state transport in semiconductor–dielectric–iron–semiconductor (SDIS) four-nanolayer sandwich devices. The exchange-resonance spectra in such devices are quite specific, differing also from spectra observed earlier in other three-nanolayer devices. The theoretical model developed earlier is extended and used to interpret the available experimental results. A detailed ab initio analysis of the magnetic-field dependence of the output magnetic moment is also performed. The model predicts an exchange spectrum comprising a series of peaks, with the spectral structure determined by several factors, discussed in the paper.
- OSTI ID:
- 22475727
- Journal Information:
- Materials Research Bulletin, Vol. 64; Other Information: Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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