Mechanosynthesis, deposition and characterization of CZTS and CZTSe materials for solar cell applications
- Department of Physics, Maamallan Institute of Technology, Sriperumpudur 602 105, Tamilnadu (India)
- Department of Physics, Anna University, Chennai 600 025, Tamilnadu (India)
- Centre for Nanoscience and Nanotechnology, Sathyabama University, Chennai 600 119, Tamilnadu (India)
Mechanosynthesis of nanocrystalline powders of CZTS and CZTSe by ball milling technique and the physical properties of thermally evaporated CZTS and CZTSe thin films as a function of substrate temperature are investigated. Nanocrystalline Cu–Zn–Tin–Sulphide (CZTS) and Cu–Zn–Tin–Selenide (CZTSe) powders synthesized by ball milling at different milling time using the source materials of Cu, Zn, Sn, S (or) Se in the ratio 2:1:1:4 are investigated. The above synthesized powder was thermally evaporated on glass substrate kept at room temperature and 673 K under a vacuum of 10{sup −6} mbar to prepare quaternary compound semiconducting thin films in a single step process. The synthesized powder and deposited CZTS and CZTSe thin films belong to tetragonal crystal system. Raman spectra reveal that the synthesized nanocrystals are pure without any secondary phases. A gradual reduction in optical bandgap of films was observed with increasing substrate temperature due to increased crystallinity of the films. The changes in surface morphology of the films with respect to substrate temperature were studied by scanning electron microscopy and atomic force microscopy. Electrical studies indicate that the deposited films have p-type conductivity. - Highlights: • Nanocrystalline powders of CZTS and CZTSe are synthesized by ball milling technique. • The ball milled powder was thermally evaporated on glass at room temperature and 673 K. • Raman spectroscopy reveals that the synthesized nanocrystals are pure without any secondary phases. • SEM and AFM micrographs illustrate the granular type of growth and the roughness and particle sizes obtained at the substrate temperature of 673 K are higher than those obtained in the room temperature. • Hall coefficient obtained for the film confirms the p-type conductivity. • A gradual reduction in optical bandgap was observed with increasing substrate temperature.
- OSTI ID:
- 22475695
- Journal Information:
- Journal of Solid State Chemistry, Vol. 227; Other Information: Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
ATOMIC FORCE MICROSCOPY
COPPER COMPOUNDS
CRYSTALS
MORPHOLOGY
NANOMATERIALS
NANOSTRUCTURES
PARTICLE SIZE
QUATERNARY ALLOY SYSTEMS
QUATERNARY AMMONIUM COMPOUNDS
RAMAN SPECTRA
RAMAN SPECTROSCOPY
SCANNING ELECTRON MICROSCOPY
SOLAR CELLS
SUBSTRATES
THIN FILMS
TIN SELENIDES
TIN SULFIDES
ZINC COMPOUNDS