Structural and phase transformation of A{sup III}B{sup V}(100) semiconductor surface in interaction with selenium

Journal Article · Sun Mar 15 00:00:00 EDT 2015 · Crystallography Reports

DOI:https://doi.org/10.1134/S1063774515020042· OSTI ID:22472402

Bezryadin, N. N. ^[1]

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1. Voronezh State University of Engineering Technologies (Russian Federation)

Surfaces of GaAs(100), InAs(100), and GaP(100) substrates thermally treated in selenium vapor have been investigated by transmission electron microscopy and electron probe X-ray microanalysis. Some specific features and regularities of the formation of A{sub 3}{sup III}B{sub 4}{sup VI} (100)c(2 × 2) surface phases and thin layers of gallium or indium selenides A{sub 2}{sup III}B{sub 3}{sup VI} (100) on surfaces of different A{sup III}B{sup V}(100) semiconductors are discussed within the vacancy model of surface atomic structure.

• OSTI ID: 22472402
• Journal Information: Crystallography Reports, Vol. 60, Issue 2; Other Information: Copyright (c) 2015 Pleiades Publishing, Inc.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7745
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRON PROBES
GALLIUM
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
INDIUM SELENIDES
MICROANALYSIS
PHASE TRANSFORMATIONS
SELENIUM
SEMICONDUCTOR MATERIALS
SUBSTRATES
SURFACES
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
VACANCIES
X RADIATION