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Title: Silver diffusion over silicon surfaces with adsorbed tin atoms

Abstract

Silver diffusion over the (111), (100), and (110) surfaces of silicon with preliminarily adsorbed tin atoms is studied by Auger electron spectroscopy and low-energy electron diffraction. Diffusion is observed only on the surface of Si(111)-2√3 × 2√3-Sn. The diffusion mechanism is established. It is found that the diffusion coefficient depends on the concentration of diffusing atoms. The diffusion coefficient decreases with increasing silver concentration, while the activation energy and the preexponential factor increase.

Authors:
 [1]
  1. Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
Publication Date:
OSTI Identifier:
22472389
Resource Type:
Journal Article
Journal Name:
Journal of Experimental and Theoretical Physics
Additional Journal Information:
Journal Volume: 120; Journal Issue: 2; Other Information: Copyright (c) 2015 Pleiades Publishing, Inc.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7761
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; ATOMS; AUGER ELECTRON SPECTROSCOPY; CONCENTRATION RATIO; CRYSTAL STRUCTURE; DIFFUSION; ELECTRON DIFFRACTION; SILICON; SILVER; SURFACES; TIN

Citation Formats

Dolbak, A. E., E-mail: dolbak@isp.nsc.ru, and Olshanetskii, B. Z. Silver diffusion over silicon surfaces with adsorbed tin atoms. United States: N. p., 2015. Web. doi:10.1134/S1063776115020107.
Dolbak, A. E., E-mail: dolbak@isp.nsc.ru, & Olshanetskii, B. Z. Silver diffusion over silicon surfaces with adsorbed tin atoms. United States. https://doi.org/10.1134/S1063776115020107
Dolbak, A. E., E-mail: dolbak@isp.nsc.ru, and Olshanetskii, B. Z. 2015. "Silver diffusion over silicon surfaces with adsorbed tin atoms". United States. https://doi.org/10.1134/S1063776115020107.
@article{osti_22472389,
title = {Silver diffusion over silicon surfaces with adsorbed tin atoms},
author = {Dolbak, A. E., E-mail: dolbak@isp.nsc.ru and Olshanetskii, B. Z.},
abstractNote = {Silver diffusion over the (111), (100), and (110) surfaces of silicon with preliminarily adsorbed tin atoms is studied by Auger electron spectroscopy and low-energy electron diffraction. Diffusion is observed only on the surface of Si(111)-2√3 × 2√3-Sn. The diffusion mechanism is established. It is found that the diffusion coefficient depends on the concentration of diffusing atoms. The diffusion coefficient decreases with increasing silver concentration, while the activation energy and the preexponential factor increase.},
doi = {10.1134/S1063776115020107},
url = {https://www.osti.gov/biblio/22472389}, journal = {Journal of Experimental and Theoretical Physics},
issn = {1063-7761},
number = 2,
volume = 120,
place = {United States},
year = {Sun Feb 15 00:00:00 EST 2015},
month = {Sun Feb 15 00:00:00 EST 2015}
}