Cathodo- and photoluminescence increase in amorphous hafnium oxide under annealing in oxygen
- Ioffe Physical Technical Institute (Russian Federation)
- Ural State Technical University (Russian Federation)
- Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
- Russian Academy of Sciences, Institute of Geology and Mineralogy, Siberian Branch (Russian Federation)
Cathodo- and photoluminescence of amorphous nonstoichiometric films of hafnium oxide are studied with the aim to verify the hypothesis that oxygen vacancies are responsible for the luminescence. To produce oxygen vacancies, hafnium oxide was enriched in surplus metal during synthesis. To reduce the oxygen concentration, the film was annealed in oxygen. A qualitative control of the oxygen concentration was carried out by the refractive index. In the initial, almost stoichiometric films we observed a 2.7-eV band in cathodoluminescence. Annealing in oxygen results in a considerable increase in its intensity, as well as in the appearance of new bands at 1.87, 2.14, 3.40, and 3.6 eV. The observed emission bands are supposed to be due to single oxygen vacancies and polyvacancies in hafnium oxide. The luminescence increase under annealing in an oxygen atmosphere may be a result of the emission quenching effect.
- OSTI ID:
- 22472306
- Journal Information:
- Journal of Experimental and Theoretical Physics, Vol. 120, Issue 4; Other Information: Copyright (c) 2015 Pleiades Publishing, Inc.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7761
- Country of Publication:
- United States
- Language:
- English
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