Kinetics of vertical transport and localization of electrons in strained semiconductor supperlattices
Journal Article
·
· Journal of Experimental and Theoretical Physics
- St. Petersburg State Technical University (Russian Federation)
The kinetics of vertical electron transport in a semiconductor superlattice is considered taking into account partial localization of electrons. The time dependences of photoemission currents from samples based on a strained semiconductor superlattice calculated by numerically solving the kinetic equation are in good agreement with experimental data. Comparison of the theory with experiment makes it possible to determine the characteristic electron localization and thermoactivation times, the diffusion length, and losses of photoelectrons in the superlattice.
- OSTI ID:
- 22472123
- Journal Information:
- Journal of Experimental and Theoretical Physics, Vol. 121, Issue 2; Other Information: Copyright (c) 2015 Pleiades Publishing, Inc.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7761
- Country of Publication:
- United States
- Language:
- English
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