Anisotropic spin–orbit stark effect in cubic semiconductors without an inversion center
- Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
The effect of external electric and magnetic fields on shallow donor levels in a semiconductor of the T{sub d} crystallographic class is analyzed. Application of an electric field eliminates the symmetry of the donor potential with respect to space inversion; as a result, corrections from the momentum-odd spin–orbit Dresselhaus term appear in the donor levels. In a strong electric field, such corrections determine the anisotropy of spin splitting of the donor levels relative to the directions of the external fields in the crystallographic coordinate system. Analytic expressions are derived for the spin splitting anisotropy for various relations between the magnitudes of the magnetic and electric fields. The results of this study can be used to determine the Dresselhaus spin–orbit interaction constant by a new method (in experiments on spin splitting of donor levels)
- OSTI ID:
- 22472073
- Journal Information:
- Journal of Experimental and Theoretical Physics, Vol. 121, Issue 3; Other Information: Copyright (c) 2015 Pleiades Publishing, Inc.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7761
- Country of Publication:
- United States
- Language:
- English
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