Distribution of elastic strains appearing in gallium arsenide as a result of doping with isovalent impurities of phosphorus and indium
- Nizhni Novgorod Lobachevsky State University (Russian Federation)
- Nizhny Novgorod State University, Physicotechnical Research Institute (Russian Federation)
The distribution of elastic strains in a system consisting of a quantum-dot layer and a buried GaAs{sub x}P{sub 1−x} layer is studied using geometric phase analysis. A hypothesis is offered concerning the possibility of controlling the process of the formation of InAs quantum dots in a GaAs matrix using a local isovalent phosphorus impurity.
- OSTI ID:
- 22470146
- Journal Information:
- Semiconductors, Vol. 49, Issue 1; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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