Simulation of the effective concentration profiles in InGaAs/GaAs heterostructures containing δ-doped layers
- Nizhni Novgorod State University (Russian Federation)
- Nizhni Novgorod State University, Physical Technical Research Institute (Russian Federation)
InGaAs/GaAs heterostructures containing quantum wells and δ-doped layers are studied theoretically and experimentally. On the basis of the procedure of self-consistently solving the Schrödinger equation and Poisson equation, the differential capacitance and the apparent electron concentration profiles are numerically calculated for structures with different mutual arrangements of the quantum well and the δ layer. The results of the calculations are compared with the result of analyzing the experimental capacitance-voltage characteristics of the structures. The systematic features of the behavior of the apparent concentration profiles and capacitance-voltage characteristics in relation to the geometric properties of the structure, the temperature, and the doping level are established.
- OSTI ID:
- 22470136
- Journal Information:
- Semiconductors, Vol. 49, Issue 1; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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