Exchange enhancement of the electron g factor in strained InGaAs/InP heterostructures

Journal Article · Sun Feb 15 00:00:00 EST 2015 · Semiconductors

DOI:https://doi.org/10.1134/S1063782615020141· OSTI ID:22470075

Krishtopenko, S. S.; Kalinin, K. P.; Spirin, K. E.; Gavrilenko, V. I. ^[1]; Baidus, N. V.; Zvonkov, B. N. ^[2]

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1. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
2. Lobachevsky State University of Nizhni Novgorod (Russian Federation)

The exchange enhancement of the electron g factor in strained InGaAs/InP heterostructures with a two-dimensional electron gas is studied. Analysis of the temperature dependence of the resistance in the minima of the Shubnikov-de Haas oscillations in perpendicular magnetic fields up to 12 T in the vicinity of the odd filling factors of the Landau levels yields the values of the effective electron Lande factor g* from −8.6 to −10.1. The experimental values are compared with the results of theoretical calculations of the g factor of quasiparticles. The calculations are performed using an eight-band k · p Hamiltonian and take into account exchange interaction in the two-dimensional electron gas. It is shown that, under the conditions of a large overlap between the spin-split Landau levels, the maximum value of the quasiparticle g factor can be attained in the vicinity of even filling factors. This is caused by the nonparabolicity of the electron dispersion relation.

• OSTI ID: 22470075
• Journal Information: Semiconductors, Vol. 49, Issue 2; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COMPARATIVE EVALUATIONS
DISPERSION RELATIONS
ELECTRON GAS
ELECTRONS
EXCHANGE INTERACTIONS
GALLIUM ARSENIDES
HAMILTONIANS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM PHOSPHIDES
LANDE FACTOR
MAGNETIC FIELDS
OSCILLATIONS
QUASI PARTICLES
SPIN
STRAINS
TEMPERATURE DEPENDENCE
TWO-DIMENSIONAL SYSTEMS