Temperature dependence of the carrier lifetime in Cd{sub x}Hg{sub 1−x}Te narrow-gap solid solutions with consideration for Auger processes
- Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
The temperature dependence of the carrier lifetime in Cd{sub x}Hg{sub 1−x}Te narrow-gap solid solutions in the temperature range 5 K < T < 300 K is analyzed within the scope of a microscopic model. Main attention is given to an analysis of the Auger recombination mechanism governing the carrier lifetime at high temperatures. The Auger-recombination rates are calculated with consideration for specific features of the band structure of the narrow-gap semiconductor in microscopic theory. It is shown that strict account of the non-parabolicity of the electronic structure in terms of Kane’s model leads to a substantially different temperature dependence of the Auger-recombination rates, compared with the approach in which nonparabolicity is disregarded.
- OSTI ID:
- 22469989
- Journal Information:
- Semiconductors, Vol. 49, Issue 4; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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