Thermal resistance of ultra-small-diameter disk microlasers

Journal Article · Fri May 15 00:00:00 EDT 2015 · Semiconductors

DOI:https://doi.org/10.1134/S1063782615050279· OSTI ID:22469954

Kryzhanovskaya, N. V. ^[1]; Maximov, M. V. ^[2]; Lipovskii, A. A.; Savelyev, A. V.; Shostak, I. I.; Moiseev, E. I.; Kudashova, Yu. V. ^[1]; Kulagina, M. M.; Troshkov, S. I. ^[2]

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1. St. Petersburg Academic University-Nanotechnology Research and Education Centre (Russian Federation)
2. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

The thermal resistance of AlGaAs/GaAs microlasers of the suspended-disk type with a diameter of 1.7–4 μm and InAs/InGaAs quantum dots in the active region is inversely proportional to the squared diameter of the microdisk. The proportionality factor is 3.2 × 10{sup −3} (K cm{sup 2})/W, and the thermal resistance is 120–20°C/mW.

• OSTI ID: 22469954
• Journal Information: Semiconductors, Vol. 49, Issue 5; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
GALLIUM ARSENIDES
INDIUM ARSENIDES
QUANTUM DOTS
SEMICONDUCTOR LASERS
THERMAL CONDUCTIVITY