Recombination activity of interfaces in multicrystalline silicon

Journal Article · Mon Jun 15 00:00:00 EDT 2015 · Semiconductors

DOI:https://doi.org/10.1134/S1063782615060196· OSTI ID:22469908

Yakimov, E. B. ^[1]; Nepomnyashchikh, A. I.; Pavlova, L. A. ^[2]; Feklisova, O. V. ^[1]

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1. Russian Academy of Sciences, Institute of Microelectronics Technology and High-Purity Materials (Russian Federation)
2. Russian Academy of Sciences, Vinogradov Institute of Geochemistry, Siberian Branch (Russian Federation)

The electrical activity of grain boundaries in multicrystalline silicon grown from metallurgical silicon by the Bridgman method is investigated by the method of electron-beam induced current. The main tendencies of atypical manifestation of the local electrical activity of Σ3(111) and Σ9(110) special boundaries are revealed. The structural features of the grain boundaries after selective etching and the impurity-distribution characteristics in multicrystalline silicon are determined by the methods of electron backscattering diffraction and electron-probe microanalysis.

• OSTI ID: 22469908
• Journal Information: Semiconductors, Vol. 49, Issue 6; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BRIDGMAN METHOD
CRYSTAL STRUCTURE
ELECTRON DIFFRACTION
ELECTRON MICROPROBE ANALYSIS
ETCHING
GRAIN BOUNDARIES
IMPURITIES
INTERFACES
RECOMBINATION
SCANNING ELECTRON MICROSCOPY
SILICON