Quantitative description of the properties of extended defects in silicon by means of electron- and laser-beam-induced currents

Journal Article · Mon Jun 15 00:00:00 EDT 2015 · Semiconductors

DOI:https://doi.org/10.1134/S1063782615060226· OSTI ID:22469905

Yakimov, E. B. ^[1]; Nikolaev, D. P. ^[2]; Chukalina, M. V. ^[1]

---

1. Russian Academy of Sciences, Institute of Microelectronics Technology and High-Purity Materials (Russian Federation)
2. Russian Academy of Sciences, Kharkevich Institute for Information Transmission Problems (Russian Federation)

A solar cell on a wafer of multicrystalline silicon containing grain boundaries was studied by the induced-current method. The sample was scanned by an electron beam and by a laser beam at two wavelengths (980 and 635 nm). The recorded induced-current maps were aligned by means of a specially developed code, that enabled to analyze the same part of the grain boundary for three types of measurements. Optimization of the residual between simulated induced-current profiles and those obtained experimentally yielded quantitative estimates of the characteristics of a sample and its defects: the diffusion length of minority carriers and recombination velocity at the grain boundary.

• OSTI ID: 22469905
• Journal Information: Semiconductors, Vol. 49, Issue 6; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHARGE CARRIERS
DIFFUSION LENGTH
ELECTRIC CURRENTS
ELECTRON BEAMS
ELECTRON SCANNING
ELECTRONS
GRAIN BOUNDARIES
LASER RADIATION
OPTIMIZATION
RECOMBINATION
SILICON
SOLAR CELLS
VELOCITY