Study of the properties of silicon-based semiconductor converters for betavoltaic cells
- National Research Center Kurchatov Institute (Russian Federation)
Silicon p-i-n diodes are studied in a scanning electron microscope under conditions simulating the β-radiation from a radioactive Ni{sup 63} source with an activity of 10 mCi/cm{sup 2}. The attainable parameters of β-voltaic cells with a source of this kind and a silicon-based converter of β-particle energy to electric current are estimated. It is shown that the power of elements of this kind can reach values of ∼10 nW/cm{sup 2} even for a cell with an area of one centimeter, which is rather close to the calculated value.
- OSTI ID:
- 22469904
- Journal Information:
- Semiconductors, Vol. 49, Issue 6; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
A radioluminescent nuclear battery using volumetric configuration: 63Ni solution/ZnS:Cu,Al/InGaP
Simulation of the β-voltaic effect in silicon pin structures irradiated with electrons from a nickel-63 β source
Demonstration of a Three-Dimensionally Structured Betavoltaic
Journal Article
·
Thu Sep 14 00:00:00 EDT 2017
· Applied Radiation and Isotopes
·
OSTI ID:22469904
+2 more
Simulation of the β-voltaic effect in silicon pin structures irradiated with electrons from a nickel-63 β source
Journal Article
·
Fri Jan 15 00:00:00 EST 2016
· Semiconductors
·
OSTI ID:22469904
Demonstration of a Three-Dimensionally Structured Betavoltaic
Journal Article
·
Tue Jan 05 00:00:00 EST 2021
· Journal of Electronic Materials
·
OSTI ID:22469904
+3 more