High-efficiency plasma treatment for surface modification of LPCVD ZnO
- Research and Development Center of Thin Film Technologies in Energetics under Ioffe Institute LLC (Russian Federation)
- Ioffe Physicotechnical Institute of the Russian Academy of Sciences (Russian Federation)
- St. Petersburg Electrotechnical University “LETI” (Russian Federation)
Plasma treatment of LPCVD Boron-doped ZnO aimed at surface modification of the films has been performed. We have shown that five minutes treatment with RF magnetron Ar plasma can be sufficient to transform surface morphology from as-deposited V-type to U-type, which better suits the growth and enhances the properties of post-deposited microcrystalline silicon as a material for PV modules. Effect of plasma treatment on optical and electrical properties and surface morphology has been studied. Comparative analysis of the acquired results has shown that short time treatment can provide required changes in surface morphology without significant deterioration of structure and electrical and optical properties of treated films, while long time treatment results in reduction of electronic properties most probably caused by excess defect formation at the surface of ZnO films. These results show that, despite promising outlooks, RF magnetron plasma treatment of ZnO for the production of PV modules requires careful optimization.
- OSTI ID:
- 22469894
- Journal Information:
- Semiconductors, Vol. 49, Issue 6; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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