Resistance of 4H-SiC Schottky barriers at high forward-current densities
- Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
The resistance of Schottky barriers based on 4H-SiC is experimentally determined at high forward-current densities. The measured resistance is found to be significantly higher than the resistance predicted by classical mechanisms of electron transport in Schottky contacts. An assumption concerning the crucial contribution of the tunnel-transparent intermediate oxide layer between the metal and semiconductor to the barrier resistance is proposed and partially justified.
- OSTI ID:
- 22469834
- Journal Information:
- Semiconductors, Vol. 49, Issue 7; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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