On the optimization of asymmetric barrier layers in InAlGaAs/AlGaAs laser heterostructures on GaAs substrates
- Virginia Polytechnic Institute and State University, Blacksburg (United States)
- Technical University of Denmark, Kgs. Lyngby, DTU Fotonik (Denmark)
- Russian Academy of Sciences, St. Petersburg Academic University, Nanotechnology Research and Education Centre (Russian Federation)
- Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
Band offsets at the heterointerface are calculated for various combinations of InAlGaAs/AlGaAs heteropairs that can be synthesized on GaAs substrates in the layer-by-layer pseudomorphic growth mode. Patterns which make it possible to obtain an asymmetric barrier layer providing the almost obstruction-free transport of holes and the highest possible barrier height for electrons are found. The optimal compositions of both compounds (In{sup 0.232}Al{sup 0.594}Ga{sup 0.174}As/Al{sup 0.355}Ga{sup 0.645}As) at which the flux of electrons across the barrier is at a minimum are determined with consideration for the critical thickness of the indium-containing quaternary solid solution.
- OSTI ID:
- 22469833
- Journal Information:
- Semiconductors, Vol. 49, Issue 7; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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