Formation of III–V ternary solid solutions on GaAs and GaSb plates via solid-phase substitution reactions
- Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
Processes are considered in which ultrathin layers of III–V ternary solid solutions are formed via the delivery of Group-V element vapors to GaAs and GaSb semiconductor plates, with solid-phase substitution reactions occurring in the surface layers of these plates. This method can form defect-free GaAs{sup 1–x}P{sup x}, GaAs{sup x}Sb{sup 1–x}, and GaP{sup x}Sb{sup 1–x} layers with thicknesses of 10–20 nm and a content x of the embedded components of up to 0.04.
- OSTI ID:
- 22469828
- Journal Information:
- Semiconductors, Vol. 49, Issue 7; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
Ternary III-V solar cells for multicolor applications
Thermo-emf of the phases of the semiconductor eutectic alloys of the systems A/sup III/B/sup V/-Ge(Si) and Te-A/sub 2//sup V/Te/sub 3/
InGaSb Defect Filter Layer to Improve Performance of GaSb Solar Cells Grown on GaAs Substrates
Conference
·
Wed Sep 01 00:00:00 EDT 1982
· Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
·
OSTI ID:22469828
+2 more
Thermo-emf of the phases of the semiconductor eutectic alloys of the systems A/sup III/B/sup V/-Ge(Si) and Te-A/sub 2//sup V/Te/sub 3/
Journal Article
·
Mon Feb 01 00:00:00 EST 1988
· Inorg. Mater. (Engl. Transl.); (United States)
·
OSTI ID:22469828
+1 more
InGaSb Defect Filter Layer to Improve Performance of GaSb Solar Cells Grown on GaAs Substrates
Journal Article
·
Tue Oct 06 00:00:00 EDT 2020
· Journal of Electronic Materials
·
OSTI ID:22469828
+2 more