On the shift of the electroluminescence spectra of In{sub x}Ga{sub 1−x}N/GaN structures with various indium contents and various substrate materials caused by the stark effect and mechanical stresses

Journal Article · Sat Aug 15 00:00:00 EDT 2015 · Semiconductors

DOI:https://doi.org/10.1134/S1063782615080229· OSTI ID:22469823

Vlasenko, A. I.; Kisselyuk, M. P.; Vlasenko, Z. K.; Khmil’, D. N. ^[1]; Borshch, V. V. ^[2]

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1. National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine)
2. Poltava National Technical University named after Yurii Kondratyuk (Ukraine)

The shift between the maxima of the electroluminescence spectra of In{sub x}Ga{sub 1−x}N/GaN structures is measured at forward and reverse bias depending on the indium content x in the quantum well and on the substrate material (SiC, AuSn/Si, and Al{sub 2}O{sub 3}). It is established that this shift increases as the indium concentration in the In{sub x}Ga{sub 1−x}N layer and mechanical stresses from the substrate increase.

• OSTI ID: 22469823
• Journal Information: Semiconductors, Vol. 49, Issue 8; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
CONCENTRATION RATIO
ELECTROLUMINESCENCE
EMISSION SPECTRA
GALLIUM NITRIDES
GOLD
INDIUM COMPOUNDS
LAYERS
QUANTUM WELLS
SILICON
SILICON CARBIDES
STARK EFFECT
STRESSES
SUBSTRATES
TIN