Al{sub x}Ga{sub 1−x}As/GaAs(100) hetermostructures with anomalously high carrier mobility

Journal Article · Sat Aug 15 00:00:00 EDT 2015 · Semiconductors

DOI:https://doi.org/10.1134/S1063782615080187· OSTI ID:22469822

Goloshchapov, D. L.; Lenshin, A. S.; Ternovaya, V. E. ^[1]; Nikolaev, D. N.; Tarasov, I. S.; Shamakhov, V. V. ^[2]; Popov, A. V. ^[3]

---

1. Voronezh State University (Russian Federation)
2. Russian Academy of Sciences, Ioffe Institute (Russian Federation)
3. Research Institute of Electronics (Russian Federation)

Structural and spectroscopic methods are used to study the epitaxial layers of n-type Al{sub x}Ga{sub 1−x}As solid solutions produced by the metal-organic chemical vapor deposition method. It is shown that, when Al{sub x}Ga{sub 1−x}As solid solutions are doped with carbon to a level of (1.2–6.7) × 10{sup 17} cm{sup −3}, the electron mobility is anomalously high for the given impurity concentration and twice exceeds the calculated value. It is assumed that the ordered arrangement of carbon in the metal sublattice of the solid solution leads to a change in the average distance between impurity ions, i.e., to an increase in the mean free path of the carriers and, consequently, in the carrier mobility. The observed effect has immediate practical importance in the search for various technological ways of increasing the operating speed of functional elements of modern optoelectronic devices. The effect of the anomalously high carrier mobility in the epitaxial layer of a heteropair opens up new opportunities for the development of new structures on the basis of Al{sub x}Ga{sub 1−x}As compounds.

• OSTI ID: 22469822
• Journal Information: Semiconductors, Vol. 49, Issue 8; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION SPECTROSCOPY
ALUMINIUM COMPOUNDS
CARRIER MOBILITY
CHEMICAL VAPOR DEPOSITION
CONCENTRATION RATIO
DOPED MATERIALS
ELECTRON MOBILITY
EPITAXY
GALLIUM ARSENIDES
HETEROJUNCTIONS
LAYERS
MEAN FREE PATH
N-TYPE CONDUCTORS
OPTOELECTRONIC DEVICES
ORGANOMETALLIC COMPOUNDS
SOLID SOLUTIONS
X-RAY SPECTROSCOPY