Characterization of the spatial inhomogeneity of heterointerfaces in GaAs/AlGaAs quantum wells by photoreflectance spectroscopy

Journal Article · Tue Sep 15 00:00:00 EDT 2015 · Semiconductors

DOI:https://doi.org/10.1134/S1063782615090031· OSTI ID:22469794

Avakyants, L. P.; Bokov, P. Yu. ^[1]; Kazakov, I. P. ^[2]; Chervyakov, A. V. ^[1]

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1. Moscow State University, Faculty of Physics (Russian Federation)
2. Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)

GaAs/AlGaAs quantum-well heterostructures with well widths from 20 to 35 nm are investigated by photoreflectance spectroscopy. The broadening of spectral lines related to band-to-band transitions increases with the transition energy and decreases with the well width. The observed decrease in the broadening parameter with increasing well width is explained in terms of spatial inhomogeneity of the heterointerfaces. According to the experimental data, the interface inhomogeneity in the structures under study is 0.34–0.39 nm (1.3–1.4 monolayers)

• OSTI ID: 22469794
• Journal Information: Semiconductors, Vol. 49, Issue 9; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
ABSORPTION SPECTROSCOPY
ALUMINIUM ARSENIDES
GALLIUM ARSENIDES
HETEROJUNCTIONS
INTERFACES
LINE BROADENING
QUANTUM WELLS
SPECTRAL REFLECTANCE