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Title: Detection of impurity diamagnetic susceptibility and its behavior in n-Ge:As in the region of the insulator–metal phase transition

Abstract

The method of superconducting quantum interference device (SQUID) magnetometry is used to measure and study low-temperature (T ≤ 100K) susceptibility in a series of samples of heavily doped Ge:As samples on the insulator side of the insulator–metal phase transition. Subtracting the known values of the magnetic susceptibility of the lattice from the measurement results, the values of the impurity magnetic susceptibility of the system are obtained. Using the method of electron spin resonance, the paramagnetic component of the impurity susceptibility is determined. Subtraction of the paramagnetic component from the total impurity susceptibility is used to obtain, for the first time, the values of the impurity diamagnetic susceptibility (∼5 × 10{sup –8} cm{sup 3}/g). The obtained result is consistent with estimates obtained for the localization radius of an electron at an As donor. Lowering the temperature to T ≤ 4 K leads to an increase in the diamagnetic susceptibility, which is consistent with the observed increase in the paramagnetic susceptibility. The observed effect is accounted for by the transition of impurity electrons from the singlet state to the triplet one.

Authors:
; ; ; ;  [1]
  1. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22469726
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 49; Journal Issue: 10; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ARSENIC; CRYSTAL LATTICES; DIAMAGNETISM; DOPED MATERIALS; ELECTRON SPIN RESONANCE; ELECTRONS; GERMANIUM; MAGNETIC SUSCEPTIBILITY; PARAMAGNETISM; PHASE TRANSFORMATIONS; SQUID DEVICES; TEMPERATURE DEPENDENCE; TRIPLETS

Citation Formats

Veinger, A. I., E-mail: anatoly.veinger@mail.ioffe.ru, Zabrodskii, A. G., Makarova, T. L., Tisnek, T. V., Goloshchapov, S. I., and Semenikhin, P. V. Detection of impurity diamagnetic susceptibility and its behavior in n-Ge:As in the region of the insulator–metal phase transition. United States: N. p., 2015. Web. doi:10.1134/S1063782615100267.
Veinger, A. I., E-mail: anatoly.veinger@mail.ioffe.ru, Zabrodskii, A. G., Makarova, T. L., Tisnek, T. V., Goloshchapov, S. I., & Semenikhin, P. V. Detection of impurity diamagnetic susceptibility and its behavior in n-Ge:As in the region of the insulator–metal phase transition. United States. https://doi.org/10.1134/S1063782615100267
Veinger, A. I., E-mail: anatoly.veinger@mail.ioffe.ru, Zabrodskii, A. G., Makarova, T. L., Tisnek, T. V., Goloshchapov, S. I., and Semenikhin, P. V. 2015. "Detection of impurity diamagnetic susceptibility and its behavior in n-Ge:As in the region of the insulator–metal phase transition". United States. https://doi.org/10.1134/S1063782615100267.
@article{osti_22469726,
title = {Detection of impurity diamagnetic susceptibility and its behavior in n-Ge:As in the region of the insulator–metal phase transition},
author = {Veinger, A. I., E-mail: anatoly.veinger@mail.ioffe.ru and Zabrodskii, A. G. and Makarova, T. L. and Tisnek, T. V. and Goloshchapov, S. I. and Semenikhin, P. V.},
abstractNote = {The method of superconducting quantum interference device (SQUID) magnetometry is used to measure and study low-temperature (T ≤ 100K) susceptibility in a series of samples of heavily doped Ge:As samples on the insulator side of the insulator–metal phase transition. Subtracting the known values of the magnetic susceptibility of the lattice from the measurement results, the values of the impurity magnetic susceptibility of the system are obtained. Using the method of electron spin resonance, the paramagnetic component of the impurity susceptibility is determined. Subtraction of the paramagnetic component from the total impurity susceptibility is used to obtain, for the first time, the values of the impurity diamagnetic susceptibility (∼5 × 10{sup –8} cm{sup 3}/g). The obtained result is consistent with estimates obtained for the localization radius of an electron at an As donor. Lowering the temperature to T ≤ 4 K leads to an increase in the diamagnetic susceptibility, which is consistent with the observed increase in the paramagnetic susceptibility. The observed effect is accounted for by the transition of impurity electrons from the singlet state to the triplet one.},
doi = {10.1134/S1063782615100267},
url = {https://www.osti.gov/biblio/22469726}, journal = {Semiconductors},
issn = {1063-7826},
number = 10,
volume = 49,
place = {United States},
year = {Thu Oct 15 00:00:00 EDT 2015},
month = {Thu Oct 15 00:00:00 EDT 2015}
}