On a semiconductor laser with a p–n tunnel junction with radiation emission through the substrate
- Lobachevsky State University of Nizhny Novgorod, Physical-Technical Research Institute (Russian Federation)
- Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
A multiwell interband cascade laser with a tunnel junction within a single waveguide and radiation emission through the substrate is implemented for the first time. It is shown that such a laser heterostructure design provides the more efficient population of quantum wells in comparison with a conventional multiwell laser with radiation emission through the substrate, due to which the lasing threshold is significantly lowered.
- OSTI ID:
- 22469698
- Journal Information:
- Semiconductors, Vol. 49, Issue 11; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
Simultaneous TE{sub 1} and TE{sub 2} mode lasing yielding dual-wavelength oscillation in a semiconductor laser with a tunnel junction
Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates
Two-band lasing in epitaxially stacked tunnel-junction semiconductor lasers
Journal Article
·
Sun May 15 00:00:00 EDT 2011
· Semiconductors
·
OSTI ID:22469698
+3 more
Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates
Journal Article
·
Mon Oct 06 00:00:00 EDT 2014
· Applied Physics Letters
·
OSTI ID:22469698
+12 more
Two-band lasing in epitaxially stacked tunnel-junction semiconductor lasers
Journal Article
·
Tue Jun 15 00:00:00 EDT 2010
· Semiconductors
·
OSTI ID:22469698
+9 more