On the radiation resistance of planar Gunn diodes with δ-doped layers
- Lobachevsky State University of Nizhny Novgorod (Russian Federation)
- Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
The radiation resistance of planar Gunn diodes is investigated. Based on the results of measurements of the pulsed current–voltage characteristics and computer simulations it is shown that the use of δ layers of doping impurities contributes to the higher radiation resistance of planar diodes by an order of magnitude compared to conventional Gunn diodes. The results of this study make it possible to formulate methodical guidelines to reduce the amount of computational and experimental studies without a considerable decrease in their informativity.
- OSTI ID:
- 22469695
- Journal Information:
- Semiconductors, Vol. 49, Issue 11; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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