Ultraviolet-visible electroluminescence from metal-oxide-semiconductor devices with CeO{sub 2} films on silicon

Journal Article · Sun Mar 15 00:00:00 EDT 2015 · AIP Advances

DOI:https://doi.org/10.1063/1.4914355· OSTI ID:22454468

Lv, Chunyan ^[1]; Zhu, Chen; Wang, Canxing; Li, Dongsheng; Ma, Xiangyang; Yang, Deren ^[1]

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1. State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

We report on ultraviolet-visible (UV-Vis) electroluminescence (EL) from metal-oxide-semiconductor (MOS) devices with the CeO{sub 2} films annealed at low temperatures. At the same injection current, the UV-Vis EL from the MOS device with the 550 °C-annealed CeO{sub 2} film is much stronger than that from the counterpart with the 450 °C-annealed CeO{sub 2} film. This is due to that the 550 °C-annealed CeO{sub 2} film contains more Ce{sup 3+} ions and oxygen vacancies. It is tentatively proposed that the recombination of the electrons in multiple oxygen-vacancy–related energy levels with the holes in Ce 4f{sup 1} energy band pertaining to Ce{sup 3+} ions leads to the UV-Vis EL.

• OSTI ID: 22454468
• Journal Information: AIP Advances, Vol. 5, Issue 3; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CERIUM IONS
CERIUM OXIDES
ELECTROLUMINESCENCE
ENERGY LEVELS
FILMS
OXYGEN
SEMICONDUCTOR DEVICES
SILICON