A quantum dot asymmetric self-gated nanowire FET for high sensitive detection

Journal Article · Thu Jan 15 00:00:00 EST 2015 · AIP Advances

DOI:https://doi.org/10.1063/1.4905787· OSTI ID:22454417

Shi, Zhangchun; Yang, Xiaohong; Nie, Chenglei; Yin, Weihong; Han, Qin ^[1]; Ni, Haiqiao; Niu, Zhichuan ^[2]

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1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083 (China)
2. State Key Laboratory for Superlattices and microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083 (China)

We present a novel device for weak light detection based on self-gated nanowire field effect structure with embedded quantum dots beside the nanowire current channel. The quantum dot with high localization energy will make the device work at high detecting temperature and the nano-channel structure will provide high photocurrent gain. Simulation has been done to optimize the structure, explain the working principle and electrical properties of the devices. The nonlinear current-voltage characteristics have been demonstrated at different temperatures. The responsivity of the device is proven to be more than 4.8 × 10{sup 6}A/W at 50 K.

• OSTI ID: 22454417
• Journal Information: AIP Advances, Vol. 5, Issue 1; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DETECTION
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
EQUIPMENT
QUANTUM DOTS
SIMULATION