Graded band gap GaInNAs solar cells
- Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen Research Center for Complex, Material Systems, University of Würzburg, Am Hubland, Würzburg D97074 (Germany)
Dilute nitride GaInN(Sb)As with a band gap (E{sub g}) of 1.0 eV is a promising material for the integration in next generation multijunction solar cells. We have investigated the effect of a compositionally graded GaInNAs absorber layer on the spectral response of a GaInNAs sub cell. We produced band gap gradings (ΔE{sub g}) of up to 39 meV across a 1 μm thick GaInNAs layer. Thereby, the external quantum efficiency—compared to reference cells—was increased due to the improved extraction of photo-generated carriers from 34.0% to 36.7% for the wavelength range from 900 nm to 1150 nm. However, this device figure improvement is accompanied by a small decrease in the open circuit voltage of about 20 mV and the shift of the absorption edge to shorter wavelengths.
- OSTI ID:
- 22423755
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 23; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ELECTRONIC STRUCTURE
EV RANGE 01-10
GALLIUM COMPOUNDS
GRADED BAND GAPS
INDIUM COMPOUNDS
MEV RANGE 10-100
NEAR INFRARED RADIATION
NITROGEN COMPOUNDS
QUANTUM EFFICIENCY
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SPECTRAL RESPONSE