Memristive behavior and forming mechanism of homogeneous TiO{sub x} device
- School of Physical Science and Information Engineering, Liaocheng University, Key Laboratory of Optical Communication Science and Technology of Shandong Province, Liaocheng 252059, Shandong (China)
- College of Physics and Electronic Information, China West Normal University, Nanchong 637009, Sichuan (China)
Highlights: • We fabricated a homogeneity TiO{sub x} device with excellent memristive behavior. • The double-interface conductive filament model is suggested. • The calculated I–V curve is in agreement with the experimental results. • The switching voltage could be adjusted by selecting the proper electrode materials. - Abstract: A homogeneous titanium oxide device is fabricated by Molecular Beam Epitaxy and the excellent memristive behavior could be observed. The resistance ratio between high resistance state and low resistance state increases as the thickness of titanium oxide or the oxygen content reduces. The forming voltage is lower than the previous report. Based on the experimental results, we suggest a double-interface conductive filament model and calculate the current–voltage curve of the device in agreement with experimental measurements. The result indicates that the forming voltage of the device will rise with increasing of the chemical potential differences across the two interfaces. In other words, the switching voltage could be adjusted by selecting a proper electrode and oxide materials.
- OSTI ID:
- 22420745
- Journal Information:
- Materials Research Bulletin, Vol. 61; Other Information: Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
Similar Records
An Interface–Type Memristive Device for Artificial Synapse and Neuromorphic Computing
Conducting mechanisms of forming-free TiW/Cu{sub 2}O/Cu memristive devices