Renewable energy in focus: In{sub 5}Se{sub 5}Br, a solid material with promising thermoelectric properties for industrial applications
- Department of Chemistry, Faculty of Natural Sciences, University of Tirana, 1001 Tirana (Albania)
- Department of Chemistry, Faculty of Mathematics and Natural Sciences, University of Turku, Vatselankatu 2, 20014 Turku (Finland)
- Institute of Mineralogy, Crystallography and Materials Science, Faculty of Chemistry and Mineralogy, University of Leipzig, Scharnhorststraße 20, 04275 Leipzig (Germany)
Highlights: • In{sub 5}Se{sub 5}Br contains indium simultaneously in three different oxidation states. • Bulk sample of In{sub 5}Se{sub 5}Br shows n-type conductivity. • The Seebeck voltage increases linearly with the temperature difference increase. • In bulk In{sub 5}Se{sub 5}Br the resistivity oscillates between 2.6 MΩ and 23 MΩ. • DTA and HT-powder XRD data show incongruent melting of the compound. - Abstract: We obtained via solid state synthesis needle-shaped crystals of In{sub 5}Se{sub 5}Br crystallizing in the space group Pmn2{sub 1} and containing indium simultaneously in three different oxidation states: In{sup +}, formal In{sup 2+} and In{sup 3+}. Bulk sample of In{sub 5}Se{sub 5}Br shows n-type conductivity and linear increase of Seebeck voltage with the temperature difference increase. Seebeck voltage of approx. 720 mV is recorded at a temperature difference of 80 K, corresponding to a Seebeck coefficient −8900 μV/K. A voltage increase up to 250 mV is recorded within 10 min upon application of a 27 K temperature difference between the contacts. On-off switching of the heating source unveils repeatable results. Linear I–U behavior with a resistivity of 2.32 × 10{sup 11} Ω is observable for individual needles of In{sub 5}Se{sub 5}Br. In bulk In{sub 5}Se{sub 5}Br the resistivity oscillates between 2.6 MΩ and 23 MΩ. DTA and HT-powder XRD data show incongruent melting to InBr, InSe and In{sub 2}Se{sub 3} at 805 K. The ternary compound expands 1.02% along [0 1 0] showing a coefficient of thermal expansion α{sub b} = 2.3(4) × 10{sup −5} K{sup −1}. Lower expansions of 0.6% and 0.16% along a and c axes corresponding to mean coefficients of thermal expansion of α{sub a}{sup ¯} = 1.3(1) × 10{sup −5} K{sup −1}, α{sub c}{sup ¯} = 4.4(5) × 10{sup −6} K{sup −1} are observed. Thin layer growing of In{sub 5}Se{sub 5}Br on glass substrate with targeted doping/substitutions can improve the sample conductivity, increase the Seebeck coefficient and lower the thermal conductivity making In{sub 5}Se{sub 5}Br a good alternative material for industrial thermoelectric applications.
- OSTI ID:
- 22420655
- Journal Information:
- Materials Research Bulletin, Vol. 60; Other Information: Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
CRYSTALS
DIFFERENTIAL THERMAL ANALYSIS
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
INDIUM BROMIDES
INDIUM SELENIDES
MELTING
POWDERS
RENEWABLE ENERGY SOURCES
SEMICONDUCTOR MATERIALS
SOLIDS
SUBSTRATES
TEMPERATURE DEPENDENCE
THERMAL CONDUCTIVITY
THERMAL EXPANSION
THERMOELECTRIC PROPERTIES
THIN FILMS
VALENCE
X-RAY DIFFRACTION