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Title: Spatial emission distribution of InGaN/GaN light-emitting diodes depending on the pattern structures

Abstract

Highlights: • We study carrier lifetimes of InGaN/GaN LEDs fabricated on different PSS. • Spatial EL distribution was investigated depending on the pattern structure. • The carrier lifetime of the LEDs was compared with the spatial EL distribution. - Abstract: We investigated the emission characteristics of InGaN/GaN light-emitting diodes (LEDs) fabricated on lens-shaped (LS) patterned-sapphire substrates (PSS) by using time-resolved photoluminescence (TRPL) and confocal-scanning-electroluminescence microscopy (CSEM). The carrier lifetimes evaluated from the TRPL spectra for the LEDs on the LS-PSS (LS-LEDs) at 10 K were relatively shorter than those of the LEDs on a conventional planar substrate (C-LED). However, the carrier lifetimes for the LS-LEDs were relatively long compared to that of the C-LED at room temperature. In the CSEM images of the LS-LEDs, the emission beam around the center region of the LS pattern was relatively weaker than that of the edge region. In addition, the beam profile for the LS-LEDs showed different shapes according to the pattern structures. The emission beam around the boundary region of the LS pattern showed periodic fluctuation with the peak-to-peak distance of 814 nm.

Authors:
; ;  [1];  [2];  [3];  [4]
  1. Division of Advanced Materials Engineering, Research Center of Advanced Materials Development, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)
  2. Korea Photonics Technology Institute, Gwangju 500-779 (Korea, Republic of)
  3. Department of Physics, Kangwon National University, Chuncheon 200-701 (Korea, Republic of)
  4. School of Nano Engineering, Inje University, Gimhae 621-749 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22420582
Resource Type:
Journal Article
Journal Name:
Materials Research Bulletin
Additional Journal Information:
Journal Volume: 58; Conference: IFFM2013: International forum on functional materials, Jeju City (Korea, Republic of), 27-29 Jun 2013; Other Information: Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0025-5408
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARRIER LIFETIME; COMPARATIVE EVALUATIONS; ELECTROLUMINESCENCE; EMISSION SPECTROSCOPY; EPITAXY; FLUCTUATIONS; GALLIUM NITRIDES; INDIUM COMPOUNDS; LIGHT EMITTING DIODES; MICROSCOPY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTOR MATERIALS; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; TIME RESOLUTION

Citation Formats

Lee, Kwanjae, Lee, Hyunjung, Lee, Cheul-Ro, Kim, Jin Soo, E-mail: kjinsoo@jbnu.ac.kr, Lee, Jin Hong, Ryu, Mee-Yi, and Leem, Jae-Young. Spatial emission distribution of InGaN/GaN light-emitting diodes depending on the pattern structures. United States: N. p., 2014. Web. doi:10.1016/J.MATERRESBULL.2014.04.063.
Lee, Kwanjae, Lee, Hyunjung, Lee, Cheul-Ro, Kim, Jin Soo, E-mail: kjinsoo@jbnu.ac.kr, Lee, Jin Hong, Ryu, Mee-Yi, & Leem, Jae-Young. Spatial emission distribution of InGaN/GaN light-emitting diodes depending on the pattern structures. United States. https://doi.org/10.1016/J.MATERRESBULL.2014.04.063
Lee, Kwanjae, Lee, Hyunjung, Lee, Cheul-Ro, Kim, Jin Soo, E-mail: kjinsoo@jbnu.ac.kr, Lee, Jin Hong, Ryu, Mee-Yi, and Leem, Jae-Young. 2014. "Spatial emission distribution of InGaN/GaN light-emitting diodes depending on the pattern structures". United States. https://doi.org/10.1016/J.MATERRESBULL.2014.04.063.
@article{osti_22420582,
title = {Spatial emission distribution of InGaN/GaN light-emitting diodes depending on the pattern structures},
author = {Lee, Kwanjae and Lee, Hyunjung and Lee, Cheul-Ro and Kim, Jin Soo, E-mail: kjinsoo@jbnu.ac.kr and Lee, Jin Hong and Ryu, Mee-Yi and Leem, Jae-Young},
abstractNote = {Highlights: • We study carrier lifetimes of InGaN/GaN LEDs fabricated on different PSS. • Spatial EL distribution was investigated depending on the pattern structure. • The carrier lifetime of the LEDs was compared with the spatial EL distribution. - Abstract: We investigated the emission characteristics of InGaN/GaN light-emitting diodes (LEDs) fabricated on lens-shaped (LS) patterned-sapphire substrates (PSS) by using time-resolved photoluminescence (TRPL) and confocal-scanning-electroluminescence microscopy (CSEM). The carrier lifetimes evaluated from the TRPL spectra for the LEDs on the LS-PSS (LS-LEDs) at 10 K were relatively shorter than those of the LEDs on a conventional planar substrate (C-LED). However, the carrier lifetimes for the LS-LEDs were relatively long compared to that of the C-LED at room temperature. In the CSEM images of the LS-LEDs, the emission beam around the center region of the LS pattern was relatively weaker than that of the edge region. In addition, the beam profile for the LS-LEDs showed different shapes according to the pattern structures. The emission beam around the boundary region of the LS pattern showed periodic fluctuation with the peak-to-peak distance of 814 nm.},
doi = {10.1016/J.MATERRESBULL.2014.04.063},
url = {https://www.osti.gov/biblio/22420582}, journal = {Materials Research Bulletin},
issn = {0025-5408},
number = ,
volume = 58,
place = {United States},
year = {Wed Oct 15 00:00:00 EDT 2014},
month = {Wed Oct 15 00:00:00 EDT 2014}
}