Optical and field emission properties of layer-structure GaN nanowires

Journal Article · Fri Aug 15 00:00:00 EDT 2014 · Materials Research Bulletin

DOI:https://doi.org/10.1016/J.MATERRESBULL.2014.04.014· OSTI ID:22420530

Cui, Zhen ^[1]; Li, Enling ^[1]; Shi, Wei; Ma, Deming ^[1]

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1. Science School, Xi’an University of Technology, Xi’an 710048 (China)

Highlights: • The layer-structure GaN nanowires with hexagonal-shaped cross-sections are produced via a process based on the CVD method. • The diameter of the layer-structure GaN nanowire gradually decreases from ∼500 nm to ∼200 nm along the wire axis. • The layer-structure GaN nanowire film possesses good field emission property. - Abstract: A layer-structure gallium nitride (GaN) nanowires, grown on Pt-coated n-type Si (1 1 1) substrate, have been synthesized using chemical vapor deposition (CVD). The results show: (1) SEM indicates that the geometry structure is layer-structure. HRTEM indicates that GaN nanowire’s preferential growth direction is along [0 0 1] direction. (2) The room temperature PL emission spectrum of the layer-structure GaN nanowires has a peak at 375 nm, which proves that GaN nanowires have potential application in light-emitting nano-devices. (3) Field-emission measurements show that the layer-structure GaN nanowires film has a low turn-on field of 4.39 V/μm (at room temperature), which is sufficient for electron emission devices, field emission displays and vacuum nano-electronic devices. The growth mechanism for GaN nanowires has also been discussed briefly.

• OSTI ID: 22420530
• Journal Information: Materials Research Bulletin, Vol. 56; Other Information: Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
ELECTRON EMISSION
EMISSION SPECTRA
FIELD EMISSION
FILMS
GALLIUM NITRIDES
LAYERS
NANOWIRES
SCANNING ELECTRON MICROSCOPY
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
TRANSMISSION ELECTRON MICROSCOPY
VISIBLE RADIATION
X-RAY DIFFRACTION